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| FDB8876 N-Channel PowerTrench(R) MOSFET November 2005 FDB8876 N-Channel PowerTrench(R) MOSFET 30V, 71A, 8.5m General Descriptions This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Features rDS(ON) = 8.5m, VGS = 10V, ID = 40A rDS(ON) = 10.3m, VGS = 4.5V, ID = 40A High performance trench technology for extremely low rDS(ON) Low gate charge High power and current handling capability RoHS Compliant D GATE G SOURCE TO-263AB FDB SERIES DRAIN (FLANGE) S MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 4.5V) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Operating and Storage Temperature Continuous (TC = 25oC, VGS = 10V) 71 65 Figure 4 180 70 -55 to 175 A A A mJ W o Ratings 30 20 Units V V C Thermal Characteristics RJC RJA Thermal Resistance Junction to Case TO-263 Thermal Resistance Junction to Ambient TO-263,1in2copper pad area 2.14 43 oC/W o C/W Package Marking and Ordering Information Device Marking FDB8876 Device FDB8876 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units (c)2005 Fairchild Semiconductor Corporation FDB8876 Rev. A 1 www.fairchildsemi.com FDB8876 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V VDS = 24V VGS = 0V VGS = 20V TA = 150oC 30 1 250 100 nA V A On Characteristics VGS(TH) rDS(ON) Gate to Source Threshold Voltage VGS = VDS, ID = 250A ID = 40A, VGS = 10V Drain to Source On Resistance ID = 40A, VGS = 4.5V ID = 40, VGS = 10V, TA = 175oC 1.2 5.7 7.3 11 2.5 8.5 10.3 14 m V Dynamic Characteristics CISS COSS CRSS RG Qg(TOT) Qg(5) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Sourse Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge VDS = 15V, VGS = 0V, f = 1MHz VGS=0.5V, f = 1MHz VGS = 0V to 10V V = 15V DD VGS = 0V to 5V ID = 40A V = 0V to 1V Ig = 1.0mA GS - 1700 340 220 2.1 32 17 1.6 4.7 3.1 6.8 45 24 2.4 - pF pF pF nC nC nC nC nC nC Switching Characteristics (VGS = 10V) tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 15V, ID = 40A VGS = 10V, RGS = 10 9 113 50 41 183 137 ns ns ns ns ns ns Drain-Source Diode Characteristic VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 40A ISD = 3.2A ISD = 40A, dISD/dt=100A/s ISD = 40A, dISD/dt=100A/s 1.25 1.0 22 8 V V ns nC Notes: 1: Starting TJ=25OC,L=1mH,IAS=19A,VDD=27V,VGS=10V 2 FDB8876 Rev. A www.fairchildsemi.com FDB8876 N-Channel PowerTrench(R) MOSFET Typical Characteristics TA = 25C unless otherwise noted 100 80 60 40 VGS=3V VGS=4.5V RDS(ON), NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.6 VGS=10V TC=25oC 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 10 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX ID,DRAIN DURRENT(A) VGS=3.5V 3v 3.5v 4v 4.5v 5v 10v 20 0 0.0 PULSE DURATION=80S DUTY CYCLE=0.5%MAX 0.5 1.0 1.5 2.0 2.5 20 30 40 50 60 70 80 VDS,DRAIN TO SOURSE VOLTAGE(V) ID,DRAIN CURRENT Figure 1. On Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.016 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.2 1.0 0.8 0.6 -80 ID = 40A VGS = 10V PULSE DURATION=80S DUTY CYCLE=0.5%MAX ID=40A 0.014 0.012 0.010 0.008 0.006 o TA = 25 C o TA = 125 C PULSE DURATION=80S DUTY CYCLE=0.5%MAX -40 o TJ, JUNCTION TEMPERATURE ( C) 0 40 80 120 160 200 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On Resistance Variation with Temperature 160 Figure 4. On-Resistance Variation with Gate-to-Source Votlage 100 IS, REVERSE DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 120 PULSE DURATION = 80ms DUTY CYCLE = 0.5% MAX VDD = 15V VGS=0V 10 125oC 80 TJ = 175oC TJ = 25oC 40 TJ = -55oC 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1 25oC 0.1 -25oC 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VGS , GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation With Source Current and Temperature 3 FDB8876 Rev. A www.fairchildsemi.com FDB8876 N-Channel PowerTrench(R) MOSFET Typical Characteristics TA = 25C unless otherwise noted 10 VGS,GATE TO SOURCE VOLTAGE(V) 5000 VDD=15V 8 C, CAPACITANCE (pF) CISS = CGS + CGD 6 1000 COSS CDS + CGD 4 WAVEFORMS IN DESCENDING ORDER: ID=40A,ID=5A CRSS = CGD 2 0 0 5 10 15 20 25 30 35 100 0.1 VGS = 0V, f = 1MHz 1 10 30 Qg,GATE CHARGE(nC) VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge characteristics 100 1000 Figure 8. Saturation characteristics IAS, AVALANCHE CURRENT (A) STARTING TJ = 25oC 10 STARTING TJ = 150 C o ID, DRAIN CURRENT (A) 100 10s 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 100s 1ms 10ms DC 1 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 0.001 0.01 0.1 1 10 100 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 1 10 tAV, TIME IN AVALANCHE (ms) VDS, DRAIN TO SOURCE VOLTAGE (V) 60 Figure 9. Unclamped Inductive Switching Capability 80 P(PK), PEAK TRANSIENT POWER (W) 800 Figure 10. Safe Operating Area SINGLE PULSE RJC = 2.14oC/W TJ = 25oC ID, DRAIN CURRENT (A) 60 VGS = 10V 40 VGS = 4.5V 20 100 0 25 50 75 100 125 o 60 150 175 10-5 10-4 10-3 10-2 10-1 100 101 TC, CASE TEMPERATURE ( C) t, PULSE WIDTH (s) Figure 11. Maximum Continuous Drain Current vs Case Temperature Figure 12. Normalized Drain to Source Breake Down Voltage vs Junction Temperature 4 FDB8876 Rev. A www.fairchildsemi.com Typical Characteristics TA = 25C unless otherwise noted FDB8876 N-Channel PowerTrench(R) MOSFET 2 1 ZJC, NORMALIZED THERMAL IMPEDANCE DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZqJC x RqJC + TC 10-3 10-2 t, RECTANGULAR PULSE DURATION (s) 10-1 100 101 0.01 10-5 10-4 Figure 13. Normolized Maximum Transient Thermal Impedance 5 FDB8876 Rev. A www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 |
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